This article covers some more interesting content from the 2021 IEEE IEDM and the MRAM Forum that followed the IEDM. We look at some papers from the conference covering magnetic random-access memory ...

Hynix Semiconductor Inc. today claimed to be the first memory maker to develop a commercially applicable ferroelectric RAM (FeRAM). FeRAM is a non-volatile, low power, high-density and high speed ...

Ferroelectric random access memory, or FeRAM, has long promised to offer a low-power alternative to flash computer memory, but its limited endurance cannot offset its deficiency in density such that ...

TOKYO — Seiko Epson Corp. has developed a new ferroelectric material for ferroelectric random-access memory (FeRAM)). The company claimed the material tentatively named PZTN will significantly improve ...

What would life be like if you had access to random access memory that coupled the fast operating characteristics of DRAM with flash memory's ability to retain data while powered off? Pretty darn ...

Austin, Feb. 23, 2026 (GLOBE NEWSWIRE) -- Ferroelectric RAM (FeRAM) Market Size & Growth Insights: According to the SNS Insider, “The Ferroelectric RAM (FeRAM) Market Size was valued at USD 0.37 ...

Toshiba Corp. said this week that later this year it plans to begin selling flash memory chips based on M-Systems Flash Disk Pioneers Ltd.’s flash memory capacity-doubling technology. It also reported ...

Toshiba has developed a higher capacity version of its FeRAM (Ferroelectric RAM) memory that can send and receive data at eight times the speed of its previously detailed prototype. FeRAM is a ...

Resetting industry benchmarks for density and operating speed, the company’s non-volatile ferroelectric random access memory (FeRAM) prototype achieves a storage density of 128 Mb and read/write ...

To migrate these devices from laboratory research to large-scale industrial fabrication is still a challenge given the industry's massive investment in silicon technologies and infrastructure. Silicon ...

CEA-Leti research engineers have demonstrated for the first time a scalable hafnia-zirconia-based ferroelectric capacitor platform integrated into the back-end-of-line (BEOL) at the 22 nm FD-SOI ...

Ferroelectric capacitor-based FeRAM continues to dominate the market with a share of 43.20% in 2025 due to its established reliability, proven architecture, and broad adoption across automotive and ...