EDN

RF transistors meet wireless challenges

The common-emitter configuration (Figure 1a) is the only one in which the input and output are out of phase. For efficient operation at high frequencies, it is crucial to minimize the series ...
Nanowerk

Transistors explained – what they are and what they do

A transistor – a word blend of "transfer" and "resistor" – is a fundamental component of today's advanced electronics. Essentially, a transistor, as one of the foundational elements of modern ...
EDN

RF Power LDMOS Transistors

Freescale Semiconductor today introduced two LDMOS RF power transistors that allow wireless base station amplifiers to cover all channels in an entire allocated frequency band. The high-efficiency ...
New Electronics

RF LDMOS power transistors

STMicroelectronics is adding a broad range of devices to the STPOWER family of LDMOS transistors, which comprises three different product series optimised for RF power amplifiers (PAs) in a variety of ...
RF Globalnet

Impact Of Drain Voltage On GaN RF Transistors And Safe Operating Area (SOA) Analysis

Gallium Nitride (GaN) RF transistors are widely used in high-power applications due to their efficiency and power density. However, increasing the drain voltage (VDS) presents challenges that impact ...
Europe PMC

Improving Carbon Nanotube-Based Radiofrequency Field-Effect Transistors by the Device Architecture and Doping Process.

The semiconducting carbon nanotube (CNT) has been considered a promising candidate for future radiofrequency (RF) electronics due to its excellent electrical properties of high mobility and small ...
IEEE

A 3D TCAD Thermal vs. Electro-Thermal Analysis of Large Area Discrete RF Power Transistors

Abstract: This paper reports on the use of TCAD for the thermal analysis of large area discrete RF power transistors to compare thermal only vs. coupled electro-thermal simulation. The specific case ...