Abstract: In this paper, an analytical model is presented to describe the input capacitance of Power-MOSFETs in 4H polytype of Silicon Carbide (4H-SiC). In order to provide an instrument for accurate ...
Abstract: SiO 2 /IGZO interface was investigated by cyclic capacitance-voltage method. High pressure water vapor annealing improved interface states. We consider that this measurement method is useful ...
ABSTRACT: In a recent investigation Mills and Riaz [1] showed that industrial oxide refractory corrosion by liquid oxides could be changed by the application of a small voltage across the liquid oxide ...
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