A research group has announced a new iPMA-type Hexa-technology in Magnetic Tunnel Junctions (MTJ) that unlocks the door to improving ultra-low power in IoT edge-devices, mobile, automotive, consumer ...
In a recently published article in IEEE Electron Devices Magazine the authors, I was one of them, looked at the impact of external magnetic fields on spin tunnel torque magnetic random-access memories ...
Marvell announced a Compute Express Link (CXL) development platform for multi-host memory pooling for cloud data center operators and server OEMs. This platform combines Marvell’s CXL technology with ...
A prototype MCU test chip with a 10.8 Mbit magnetoresistive random-access memory (MRAM) memory cell array—fabricated on a 22-nm embedded MRAM process—claims to accomplish a random read access ...
A technical paper titled “Impact of external magnetic fields on STT-MRAM” was recently published by researchers at Univ. Grenoble Alpes, Everspin, GlobalFoundries, imec, et al. “This application note ...
A new technical paper titled “Enhancing Security and Power Efficiency of Ascon Hardware Implementation with STT-MRAM” was published by researchers at CEA, Leti, Université Grenoble Alpes, CNRS, and ...
Post this The industry’s first xSPI serial interface based on Everspin’s unique STT-MRAM technology is the only commercially available persistent memory with full read and write bandwidth of 400 ...
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