EDN

LDMOS RF Power Transistors

Designed for the toughest engineering environments, NXP Semiconductors N.V. (NASDAQ: NXPI) today unveiled its new XR family of “eXtremely Rugged” LDMOS RF power transistors. The XR family is designed ...
TV Technology

Richardson RFPD announces LDMOS RF power transistors for UHF broadcast

Richardson RFPD has announced the availability of two 50V LDMOS RF power transistors, setting a new standard for ruggedness in the UHF broadcast industry. The MRFE6VP8600H and MRFE6VP8600HS are ...
EDN

Freescale : RF power transistor targets UHF broadcast applications

Freescale Semiconductor has introduced a 50 volt laterally diffused MOS (LDMOS) RF power transistor designed to deliver 50 percent higher output power than competing UHF TV broadcast solutions.
Business Wire

Wolfspeed GaN RF Devices Demonstrate Reliability to Perform in Harsh Space Environments

DURHAM, N.C.-- (BUSINESS WIRE)-- Wolfspeed, A Cree Company, announced that its GaN-on-SiC RF power transistors have completed testing to demonstrate compliance with NASA reliability standards for ...
Electronic Design

Cool RF Transistors Pack A Mean Punch

Power-Amplifier (PA) and base-station manufacturers are faced with a series of similar problems. They both have a common interest in keeping base stations cool and minimizing cost. And they each have ...
Hosted on MSN

Researchers achieve record-breaking RF GaN-on-Si transistor performance for high-efficiency 6G power amplifiers

Imec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium nitride (GaN) MOSHEMT (metal-oxide-semiconductor high-electron-mobility ...
TV Technology

Freescale Introduces High-Power, High-Efficiency UHF LDMOS Transistor

At the NAB Show, several transmitter manufacturers were showing new UHF solid-state DTV power amplifiers that were more efficient, cost less and occupied less space. Axcera showed a 10 kW average ...
Business Wire

Freescale Introduces Breakthrough Ultra-Wideband RF Power GaN Transistors in Advanced Plastic Packages

PHOENIX--(BUSINESS WIRE)--Freescale Semiconductor [NYSE: FSL], the global leader in radio frequency (RF) power transistors, today introduced two ultra-wideband RF power gallium nitride (GaN) ...
Electronic Design

Rating Power Amplifiers for RF Immunity Testing

Over the years, tutorials have appeared in EMC journals explaining how to estimate the power required from a power amplifier intended for use in an RF immunity test system. Little material, if any, ...
Compound Semiconductor

Accelerating GaN-on-silicon RF power amplification

Benchmarking the output power (P out) as a function of frequency for GaN-on-silicon. To the best of the authors’ knowledge, ...
Electronics Weekly

NXP adds to LDMOS RF power transistors

NXP has introduced new RF power transistors designed for smart industrial applications, featuring 65 V laterally diffused metal oxide semiconductor(LDMOS) silicon ...