Imec has developed a Cu-to-Cu and SiCN-to-SiCN die-to-wafer bonding process resulting in a Cu bond pad pitch of only 2µm at <350nm die-to-wafer overlay error, achieving good electrical yield. Such ...
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Semiconductor logic and memory technology development continues to push the limits of process complexity and cost, especially as the industry migrates to the 5 nm node and beyond. Optimization of the ...
The Chinese module maker and the Australian National University utilized phosphorus diffusion gettering and another defect mitigation strategy to improve the quality of n-type wafers. The proposed ...
NexWafe’s high-throughput epitaxy tool, ProCon 2.5. Image: NexWafe German solar wafer manufacturer NexWafe has announced “key milestones” in its epitaxial wafer production which it claims can reshape ...
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